Lingcun Technology has secured a multi-million yuan Pre-A funding round to accelerate the industrialization of its third-generation voltage-controlled MRAM technology, supported by strategic investors including Qianrong Holdings.

Target Company Overview

Su Zhou Lingcun Technology Co., Ltd. is focused on developing a new generation of Voltage-Controlled Magnetic Storage Chips, specifically their third-generation voltage-controlled MRAM technology. The company is located in the Suzhou Industrial Park, where they leverage a team with extensive experience in magnetic storage research and development, which spans circuit design, semiconductor processing, and magnetic device technology. Their products target high-end applications such as microcontrollers, wearable devices, mobile technology, and large data centers.

Lingcun Technology is recognized for its innovations, having acquired multiple patents related to voltage-controlled magnetic storage. These patents cover various aspects such as device design, circuit configuration, material integration, and process technology. The company recently developed the world’s first high-speed, high-density, low-power MRAM prototype and a true random number generator based on this technology.

Industry Overview in China

China's semiconductor industry has been rapidly evolving, focusing strongly on developing and producing advanced memory storage technologies. In recent years, the Chinese government has emphasized the importance of becoming sel